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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors DESCRIPTION * Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min)--MJ13070 = 450V(Min)--MJ13071 *High Switching Speed APPLICATIONS *Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: *Switching regulators *Inverters *Solenoid and relay drivers *Motor controls *Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MJ13070 VCEV Collector-Emitter Voltage MJ13071 MJ13070 VCEO(SUS) Collector-Emitter Voltage MJ13071 VEBO IC ICM IB B MJ13070/13071 VALUE 650 UNIT V 750 400 V 450 6 5 8 2 4 125 200 -65~200 V A A A A W Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.4 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER MJ13070 IC=100mA ; IB=0 MJ13071 VCE(sat)-1 VCE(sat)-2 VBE(sat) Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage MJ13070 MJ13071 MJ13070 MJ13071 IEBO hFE COB Emitter Cutoff Current DC Current Gain Output Capacitance IC= 3A; IB= 0.6A IC= 3A; IB= 0.6A;TC=100 B B MJ13070/13071 CONDITIONS MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage V 450 1.0 2.0 3.0 1.5 1.5 0.5 2.5 mA 0.5 2.5 3.0 mA 3.0 1.0 8 250 pF mA V V V IC= 5A; IB= 1A B IC= 3A; IB= 0.6A IC= 3A; IB= 0.6A;TC=100 B B ICEV Collector Cutoff Current VCEV=650V;VBE(off)=1.5V VCEV=650V;VBE(off)=1.5V;TC=100 VCEV=750V;VBE(off)=1.5V VCEV=750V;VBE(off)=1.5V;TC=100 VCE= 650V; RBE= 50,TC= 100 VCE= 750V; RBE= 50,TC= 100 VEB= 6V; IC=0 IC= 3A ; VCE= 5V IE= 0; VCB= 10V; ftest=1.0kHz ICER Collector Cutoff Current Switching times;Resistive Load td tr ts tf Delay Time Rise Time Storage Time Fall Time IC= 3A , VCC= 250V; IB1= 0.4A;tp= 30s; VBE(off)= 5V Duty Cycle2.0% 30 100 400 175 50 400 1500 500 ns ns ns ns isc Websitewww.iscsemi.cn 2 |
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